? 2002 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 36v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 125 c 2.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 3.0 3.4 v t j = 125 c 2.8 v 98922 (5/02) features ? international standard packages jedec to-220ab and to-263aa ? low switching losses, low v (sat) ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixsa) g c e to-220ab (ixsp) advance technical information v ces =1200 v i c25 = 30 a v ce(sat) = 3.4 v ixsa 15n120b ixsp 15n120b high voltage igbt "s" series - improved scsoa capability symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t j = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ge = 720 v; v ge = 15 v, r g = 10 ? 10 s non repetitive p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering (to-263) 260 c weight to-220 4 g to-263 2 g c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 7 9.5 s note2 c ies 1400 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 98 pf c res 37 pf q g 57 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 14 nc q gc 25 nc t d(on) 30 ns t ri 25 ns t d(off) 148 280 ns t fi 160 320 ns e off 1.75 3.0 mj t d(on) 30 ns t ri 25 ns e on 1.1 mj t d(off) 265 ns t fi 298 ns e off 3.1 mj r thjc 0.83 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? note3 inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? note3 ixsa 15n120b ixsp 15n120b min. recommended footprint (dimensions in inches and mm) notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g .
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